Nozzle and a substrate processing apparatus including the same

ABSTRACT

A nozzle of a nozzle device includes an arm pipe that extends in a horizontal direction and a downstream pipe formed so as to curve downward from one end of the arm pipe. In the nozzle, a metallic pipe is provided inside a second resin pipe. Moreover, a first resin pipe is provided inside the metallic pipe. A boss is attached to the tip of the metallic pipe between the first resin pipe and the second resin pipe. At the tip of the nozzle, an outer peripheral surface of the first resin pipe, an end surface of the second resin pipe and an end surface of the boss are welded by welding resin. In this way, the metallic pipe is reliably coated with the first resin pipe, the second resin pipe, the boss and the welding resin.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a nozzle that discharges a processingliquid and a substrate processing apparatus including the same.

2. Description of the Background Art

Substrate processing apparatuses have been conventionally used toperform a variety of processes on substrates such as semiconductorwafers, glass substrates for photomasks, glass substrates for liquidcrystal displays, glass substrates for plasma displays, substrates foroptical disks, substrates for magnetic disks, substrates formagneto-optical disks or the like.

In a cleaning process of the substrate, for example, a cleaning liquidand a rinse liquid as a processing liquid is supplied in this order froma processing liquid supply nozzle supported on a tip of a nozzle armthat is arranged in a horizontal direction onto the substrate that isrotated.

As the cleaning liquid, chemical liquids such as buffered hydrofluoricacid (BHF), diluted hydrofluoric acid (DHF), hydrofluoric acid,hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, aceticacid, oxalic acid, ammonia water and the like are used.

In the substrate processing apparatus in which the chemical liquid isused as the processing liquid, a metal can not be used as a material forthe processing liquid supply nozzle, the nozzle arm, a pipe and thelike, since use of a metallic member causes metallic corrosion as wellas metallic contamination caused by elution of metallic ions. Therefore,the processing liquid supply nozzle, the nozzle arm, the pipe and thelike are formed of a resin material such as fluororesin and the likehaving superior chemical resistance.

In a substrate processing apparatus of JP2002-170803 A, for example, apipe through which a chemical liquid flows is connected between adownstream portion of a chemical liquid mixer and an upstream portion ofa processing liquid supply nozzle and the pipe is formed of a tube madeof fluororesin having superior chemical resistance.

Since the resin material such as the fluororesin or the like is aninsulating material, however, when the processing liquid flows throughthe inside of the processing liquid supply nozzle, a friction betweenthe processing liquid and an inner surface of the processing liquidsupply nozzle causes static electricity, and consequently the processingliquid becomes charged.

When the processing liquid with a large amount of charges (an absolutevalue of the electric potential of charges) is supplied onto thesubstrate to be an processing target, a spark is generated by electricdischarge from the processing liquid to the substrate at the moment ofthe supply of the processing liquid, so that circuits and devices formedon the substrate are damaged in some cases.

Moreover, the nozzle arm requires strength in order to stably supportthe processing liquid supply nozzle, since the nozzle arm horizontallyextends from a position outside the substrate to above the center of thesubstrate. In a case where the nozzle arm is formed of resin asmentioned above, it is necessary to make the nozzle arm have a largerradial thickness in order to ensure strength.

Thus, the weight of the nozzle arm increases as the outer diameterthereof becomes larger. This causes a load applied to a drive system ofthe nozzle arm to be larger. In addition, the surface area of the nozzlearm becomes larger, so that the amount of the scattered processingliquid adhering to the nozzle arm also increases.

If the processing liquid adhering to the nozzle arm drops on thesubstrate, it becomes a cause of processing defects. Furthermore, if theprocessing liquid adhering to the nozzle arm is dried, it becomesparticles, which adhere to the substrate in some cases.

Moreover, when the processing liquid is vibrated by reaction, the nozzlearm and the processing liquid supply nozzle are vibrated accordingly,since the nozzle arm formed of resin has flexibility. In addition, theprocessing liquid supply nozzle is likely to be vibrated because of theforce generated when the discharge of the processing liquid from theprocessing liquid supply nozzle is started. Thus, the processing liquidis supplied onto irregular positions on the substrate with an irregularforce at an irregular rate, so that processing defects of the substrateare liable to occur.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a nozzle that iscompact and lightweight and ensures sufficient strength whilesuppressing electric discharge from an electrically charged processingliquid to a substrate, and a substrate processing apparatus includingthe same.

(1) According to an aspect of the present invention, a nozzle supportedby a supporting member for supplying a processing liquid onto asubstrate includes a first resin pipe made of a resin material, throughwhich the processing liquid flows, and having on an end thereof adischarge port that discharges the processing liquid, and a metallicpipe made of a metallic material and provided to cover an outerperiphery of the first resin pipe.

In this nozzle, the metallic pipe is provided to cover the outerperiphery of the first resin pipe through which the processing liquidflows, and the processing liquid is discharged from the discharge portof the first resin pipe onto the substrate.

The metallic pipe has electrical conductivity and covers the outerperiphery of the first resin pipe. Thus, even though the processingliquid is electrically charged, the electrically charged processingliquid is introduced to the part covered with the metallic pipe on thefirst resin pipe, so that an amount of charges of the processing liquidis reduced. This decreases a potential difference between the processingliquid and the substrate, suppresses electric discharge from theprocessing liquid to the substrate, and prevents various patterns suchas circuits, devices or the like formed on the substrate from beingdamaged.

Furthermore, since an inner peripheral surface of the metallic pipe andthe processing liquid are isolated from each other by the first resinpipe, the metallic pipe does not come into contact with the processingliquid. Accordingly, corrosion of the metallic pipe caused by theprocessing liquid and elution of metallic ions in the processing liquidare prevented.

Since this metallic pipe has high rigidity, the nozzle is reliablysupported by the supporting member without making larger a radialthickness of the metallic pipe. As a result, the nozzle that is compactand lightweight and ensures sufficient strength can be obtained.

In addition, since the metallic pipe has high rigidity, even though theprocessing liquid that passes through the first resin pipe vibrates dueto reaction, the discharge port on the end of the first resin pipe willnot vibrate greatly. Moreover, the discharge port will not vibratebecause of the force generated at the time of starting the discharge ofthe processing liquid. As a result, the processing liquid is wellsupplied from the discharge port onto the substrate, and processingdefects of the substrate are prevented.

(2) The resin material of the first resin pipe may include fluororesin.

In this case, the inner peripheral surface of the metallic pipe and theprocessing liquid are isolated from each other by the first resin pipemade of fluororesin having superior chemical resistance. This morereliably prevents the metallic pipe and the processing liquid fromcoming into contact with each other. As a result, corrosion of themetallic pipe caused by the processing liquid and elution of metallicions in the processing liquid are more reliably prevented.

(3) The nozzle may further include a second resin pipe made of apredetermined resin material and provided to cover an outer peripheralsurface of said metallic pipe.

In this case, since the outer peripheral surface of the metallic pipe isisolated from the atmosphere in the periphery of the nozzle by thesecond resin pipe, droplets of the processing liquid scattered to theperiphery of the nozzle and the atmosphere do not come into contact withthe metallic pipe. This prevents corrosion of the metallic pipe causedby the droplets of the processing liquid and the atmosphere.

(4) The resin material of the second resin pipe may include electricallyconductive resin.

In this case, both the second resin pipe and the metallic pipe haveelectrical conductivity and cover the outer periphery of the first resinpipe. Thus, even though the processing liquid is electrically charged,the electrically charged processing liquid is introduced to the partcovered with the metallic pipe on the first resin pipe, so that theamount of the charges of the processing liquid is sufficiently reduced.This decreases the potential difference between the processing liquidand the substrate, reliably suppresses the electric discharge from theprocessing liquids to the substrate, and reliably prevents the variouspatterns such as the circuits, the devices or the like formed on thesubstrate from being damaged.

(5) The metallic pipe may be grounded. In this case, there isapproximately no potential difference between the metallic pipe and thesubstrate. That is, the electric potential of the charges of themetallic pipe and the substrate becomes approximately zero,respectively. Accordingly, the electrically charged processing liquid isintroduced to the part covered with the metallic pipe on the first resinpipe, so that the amount of the charges of the processing liquid issufficiently reduced. This more reliably suppresses the electricdischarge from the processing liquid to the substrate, and reliably andsufficiently prevents the various patterns such as the circuits, thedevices or the like formed on the substrate from being damaged by theprocessing liquid.

(6) The nozzle may further include a resin film that coats a surface ofthe metallic pipe.

In this case, since the surface of the metallic pipe is coated with theresin film, the processing liquid is reliably prevented from coming intocontact with the metallic pipe. Thus, corrosion of the metallic pipecaused by the processing liquid and elution of metallic ions in theprocessing liquid are reliably prevented.

(7) The resin film may be made of fluororesin. In this case, since thesurface of the metallic pipe is coated with the resin film made offluororesin having superior chemical resistance, the metallic pipe ismore reliably prevented from coming into contact with the processingliquid. Accordingly, corrosion of the metallic pipe caused by theprocessing liquid and elution of metallic ions in the processing liquidare more reliably prevented.

(8) The metallic pipe may be made of stainless steel. Stainless steelhas superior corrosion resistance and high strength. This sufficientlyprevents corrosion of the metallic pipe and enables the thickness of themetallic pipe to be sufficiently thin while keeping strength.

(9) The end of the first resin pipe may project from the end of themetallic pipe.

In this case, the whole inner peripheral surface of the metallic pipecan be more reliably coated with the first resin pipe.

In addition, the discharge port provided at the end of the first resinpipe projects from the end of the metallic pipe. Thus, the processingliquid discharged from the discharge port is well supplied onto thesubstrate without coming into contact with the end of the metallic pipe.

(10) The nozzle may further include a sealing member made of resin andsealing the end of the metallic pipe. In this case, since the end of themetallic pipe is sealed by the sealing member, the processing liquiddoes not come into contact with the end of the metallic pipe.Accordingly, corrosion of the end of the metallic pipe caused by theprocessing liquid and elution of metallic ions in the processing liquidare prevented.

(11) According to another aspect of the present invention, a substrateprocessing apparatus that performs a predetermined process on asubstrate includes a substrate holder that holds the substrate and anozzle for supplying a processing liquid onto the substrate held by thesubstrate holder, wherein the nozzle is supported by a supportingmember, and includes a first resin pipe made of a resin material,through which the processing liquid flows, and having on an end thereofa discharge port that discharges the processing liquid, and a metallicpipe made of a metallic material and provided to cover an outerperiphery of the first resin pipe.

In this substrate processing apparatus, the substrate is held by thesubstrate holder and the processing liquid is supplied from the nozzleonto the substrate held by the substrate holder.

In this nozzle, the metallic pipe is provided to cover the outerperiphery of the first resin pipe through which the processing liquidflows, and the processing liquid is discharged from the discharge portof the first resin pipe onto the substrate.

The metallic pipe has electrical conductivity and covers the outerperiphery of the first resin pipe. Thus, even though the processingliquid is electrically charged, the electrically charged processingliquid is introduced to the part covered with the metallic pipe on thefirst resin pipe, so that an amount of charges of the processing liquidis reduced. This decreases a potential difference between the processingliquid and the substrate, suppresses electric discharge from theprocessing liquid to the substrate, and prevents various patterns suchas circuits, devices or the like formed on the substrate from beingdamaged.

Furthermore, since an inner peripheral surface of the metallic pipe andthe processing liquid are isolated from each other by the first resinpipe, the metallic pipe does not come into contact with the processingliquid. Accordingly, corrosion of the metallic pipe caused by theprocessing liquid and elution of metallic ions in the processing liquidare prevented.

Since this metallic pipe has high rigidity, the nozzle is reliablysupported by the supporting member without making larger a radialthickness of the metallic pipe. As a result, the nozzle that is compactand lightweight and ensures sufficient strength can be obtained.

In addition, since the metallic pipe has high rigidity, even though theprocessing liquid that passes through the inside of the first resin pipevibrates due to reaction, the discharge port on the end of the firstresin pipe will not vibrate greatly. Moreover, the discharge port willnot vibrate because of the force generated at the time of starting thedischarge of the processing liquid. As a result, the processing liquidis well supplied from the discharge port onto the substrate, andprocessing defects of the substrate are prevented.

Accordingly, the substrate processing apparatus that well supplies theprocessing liquid while suppressing the electric discharge from theelectrically charged processing liquid to the substrate and reliablyprevents processing defects of the substrate can be provided.

Other features, elements, characteristics, and advantages of the presentinvention will become more apparent from the following description ofpreferred embodiments of the present invention with reference to theattached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a substrate processing apparatus according toone embodiment of the present invention;

FIG. 2 is a diagram for use in explaining structures of a cleaningprocessing unit and a fluid box of the substrate processing apparatusaccording to the one embodiment of the present invention;

FIG. 3 is an external perspective view of a nozzle device provided inthe cleaning processing unit of FIG. 2;

FIG. 4 is partially enlarged sectional views of a nozzle in the nozzledevice of FIG. 3.

FIG. 5 is diagrams showing other structural examples of the nozzleprovided in the nozzle device of FIG. 2 and FIG. 3.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A nozzle and a substrate processing apparatus including the sameaccording to one embodiment of the present invention will now bedescribed with reference to drawings.

In the following description, a substrate refers to a semiconductorwafer, a glass substrate for a liquid crystal display, a glass substratefor a PDP (plasma display panel), a glass substrate for a photomask, asubstrate for an optical disk, or the like.

In addition, a processing liquid includes a chemical liquid and a rinseliquid. Examples of the chemical liquid include buffered hydrofluoricacid (BHF), diluted hydrofluoric acid (DHF), hydrofluoric acid (hydrogenfluoride water: HF), hydrochloric acid, sulfuric acid, nitric acid,phosphoric acid, acetic acid, oxalic acid, an aqueous solution ofammonia water and the like or a mixture solution thereof. Note thatexamples of the mixture solution include a mixture solution of highlyheated sulfuric acid (H₂SO₄) and oxygenated water (H₂O₂) (hereinafterabbreviated as SPM) or a mixture solution of hydrochloric acid (HCI) andoxygenated water (hereinafter abbreviated as SC2).

Examples of the rinse liquid include pure water, carbonated water, ozonewater, magnetic water, regenerated water (hydrogen water) and ion water,as well as organic solvent such as IPA (isopropyl alcohol).

(1) STRUCTURES OF SUBSTRATE PROCESSING APPARATUS

FIG. 1 is a plan view of a substrate processing apparatus according toone embodiment of the present invention. As shown in FIG. 1, thesubstrate processing apparatus 100 includes processing regions A, B, anda transporting region C therebetween.

A controller 4, fluid boxes 2 a, 2 b and cleaning processing units 5 a,5 b are arranged in the processing region A.

The fluid boxes 2 a, 2 b in FIG. 1 respectively house fluid-relatedequipment such as pipes, joints, valves, flow meters, regulators, pumps,temperature controllers, processing liquid storage tanks or the likeinvolved in supply and drain (discharge) the chemical liquid and therinse liquid to/from the cleaning processing units 5 a, 5 b.

A nozzle device according to the one embodiment of the present inventionis provided in the cleaning processing unit 5 a, 5 b. In the cleaningprocessing unit 5 a, 5 b, a cleaning process of the substrate W by thechemical liquid (hereinafter referred to as a chemical liquid process)and a cleaning process of the substrate W by the rinse liquid(hereinafter referred to as a rinsing process) are performed. In thepresent embodiment, the chemical liquid used in the cleaning processingunits 5 a, 5 b is SPM, SC2 or hydrofluoric acid and the rinse liquidused in the cleaning processing units 5 a, 5 b is pure water, forexample. Details of the nozzle device will be described later.

In the processing region B, fluid boxes 2 c, 2 d and cleaning processingunits 5 c, 5 d are arranged. The fluid boxes 2 c, 2 d and the cleaningprocessing units 5 c, 5 d respectively have similar structures to thoseof the above mentioned fluid boxes 2 a, 2 b and the cleaning processingunits 5 a, 5 b. The cleaning processing units 5 c, 5 d respectivelyperform similar process to that of the cleaning processing units 5 a, 5b.

Hereinafter, the cleaning processing units 5 a to 5 d will becollectively referred to as processing units. In the transporting regionC, a substrate transporting robot CR is provided.

An indexer ID for carrying in and out the substrate W is arranged on oneend of the processing regions A, B, and an indexer robot IR is providedinside the indexer ID. Carriers 1 that respectively house the substratesW are mounted on the indexer ID.

The indexer robot IR in the indexer ID moves in a direction of an arrowU to take out the substrate W from the carrier 1 and transfer thesubstrate W to the substrate transporting robot CR. Conversely, theindexer robot IR receives the substrate W subjected to a series ofprocesses from the substrate transporting robot CR and returns it to thecarrier 1.

The substrate transporting robot CR transports the substrate Wtransferred from the indexer robot IR to a specified processing unit, ortransports the substrate W received from the processing unit to anotherprocessing unit or to the indexer robot IR.

In the present embodiment, after the chemical liquid process and therinsing process are performed on the substrate W in any of the cleaningprocessing units 5 a to 5 d, the substrate W is carried out from thecleaning processing unit 5 a to 5 d by the substrate transporting robotCR, and carried into the carrier 1 by the indexer robot IR.

The controller 4 is composed of a computer or the like including a CPU(central processing unit), and controls the operation of each of theprocessing units in the processing regions A, B, the operation of thesubstrate transporting robot CR in the transporting region C and theoperation of the indexer robot IR in the indexer ID.

(2) STRUCTURES OF THE CLEANING PROCESSING UNIT AND THE NOZZLE DEVICE

FIG. 2 is a diagram for use in explaining the structures of the cleaningprocessing unit 5 a to 5 d and the fluid box 2 a to 2 d in the substrateprocessing apparatus 100 according to the one embodiment of the presentinvention. FIG. 3 is an external perspective view of the nozzle deviceprovided in the cleaning processing unit 5 a to 5 d of FIG. 2.

The cleaning processing unit 5 a to 5 d of FIG. 2 performs the rinsingprocess after impurities such as organic substances or the like adheringto the surface of the substrate W are removed by the chemical liquidprocess.

As shown in FIG. 2, the cleaning processing unit 5 a to 5 d is providedwith a spin chuck 21 for holding the substrate W horizontally whilerotating the substrate W around a vertical rotation shaft passingthrough the center of the substrate W. The spin chuck 21 is secured onan upper end of a rotation shaft 25, which is rotated by a chuckrotation-driving mechanism 36.

The substrate W is rotated while being horizontally held by the spinchuck 21 during the chemical liquid process and the rinsing process.Note that a mechanical spin chuck that holds the substrate W by seizingonly a plurality of parts in a periphery of the substrate W may be used,though the suction spin chuck 21 that is composed of a suction spinchuck is used in the present embodiment, as shown in FIG. 2.

A rotation shaft 63 extending from above is provided outside the spinchuck 21 so as to be rotated while being moved up and down by a nozzledevice moving mechanism 64. The nozzle device 600 is provided on a lowerend of the rotation shaft 63 so as to be positioned above the substrateW held by the spin chuck 21.

The spin chuck 21 is housed in a processing cup 23. A cylindricalpartition wall 33 is provided inside the processing cup 23. A drainspace 31 for recovering and discarding the rinse liquid used for therinsing process of the substrate W is formed so as to surround the spinchuck 21. The drain space 31 is formed into a circular and groove formso as to follow an outer circumference of the spin chuck 21.

Furthermore, a liquid circulation space 32 for recovering the chemicalliquid used in the chemical liquid process of the substrate W andallowing it to circulate in the substrate processing apparatus 100 isprovided between the processing cup 23 and the partition wall 33 so asto surround the drain space 31. The liquid circulation space 32 isformed into a circular and groove form so as to follow the outercircumference of the drain space 31.

The drain space 31 is connected to a drain pipe 34 for leading the rinseliquid to a drain system in a factory that is now shown, and the liquidcirculation space 32 is connected to a recovery pipe 35 for leading thechemical liquid to a chemical liquid recovery device that is not shown.

Above the processing cup 23, a splash guard 24 is provided forpreventing the chemical liquid or the rinse liquid from being scatteredoutwardly from the substrate W. This splash guard 24 has a rotationsymmetric shape with respect to the rotation shaft 25. In an innersurface of an upper end of the splash guard 24, a drain guiding groove41 having a V-shaped cross section is annularly formed.

In the inner surface of a lower end of the splash guard 24, a recoveryliquid guide 42 having an inclined face that inclines down outwardly isformed. In the vicinity of an upper end of the recovery liquid guide 42,a partition wall-housing groove 43 for receiving the partition wall 33of the processing cup 23 is formed.

The splash guard 24 is supported by a guard lifting mechanism composedof a ball screw mechanism or the like (not shown). The guard liftingmechanism moves the splash guard 24 upward and downward from/to acarrying in and out position P1 in which the upper end of the splashguard 24 is in approximately the same or lower position as/than that ofan upper end of the spin chuck 21, a circulation position P2 in whichthe recovery liquid guide 42 faces an outer circumference of thesubstrate W held by the spin chuck 21 and a drain position P3 in whichthe drain guiding groove 41 faces the outer circumference of thesubstrate W held by the spin chuck 21.

When the substrate W is carried to and from the spin chuck 21, thesplash guard 24 is lowered to the carrying in and out position P1.

When the splash guard 24 is in the circulation position P2, the chemicalliquid scattered outwardly from the substrate W is led to the liquidcirculation space 32 by the recovery liquid guide 42, and sent to thechemical liquid recovery device that is not shown through the recoverypipe 35. Note that the chemical liquid recovered by the chemical liquidrecovery device circulates in the substrate processing apparatus 100,and is used again in the chemical liquid process.

On the other hand, when the splash guard 24 is in the drain position P3,the rinse liquid scattered outwardly from the substrate W is led to thedrain space 31 by the drain guiding groove 41, and sent to the drainsystem in the factory that is not shown through the drain pipe 34.

As shown in FIG. 3, the nozzle device 600 includes three nozzles 60 a,60 b, 60 c, a block-shaped coupling member 61, a holder 62 and arotating platform 62S.

The nozzles 60 a to 60 c have the same shape. Each of the nozzles 60 ato 60 c is integrally composed of an upstream pipe N1, an arm pipe N2and a downstream pipe N3.

The arm pipes N2 extend in a horizontal direction, the upstream pipes N1extend in a vertical direction so as to curve upward from one end of thearm pipes N2, and the downstream pipes N3 extend in the verticaldirection so as to curve downward from the other end of the arm pipesN2.

Three through holes (not shown) are formed in the block-shaped couplingmember 61, and the upstream pipes N1 of the nozzles 60 a to 60 c areinserted into these through holes.

Accordingly, the three nozzles 60 a to 60 c are integrally secured bythe block-shaped coupling member 61.

The rotating platform 62S is composed of a circular portion S1 and arectangular portion S2. The circular portion S1 of the rotating platform62S is connected to the lower end of the above described rotation shaft63 (FIG. 2). On the other hand, the rectangular portion S2 of therotating platform 62S is attached to the holder 62.

The holder 62 is attached to the block-shaped coupling member 61. Thus,the three nozzles 60 a to 60 c are rotatably supported by the rotationshaft 63 via the block-shaped coupling member 61, the holder 62 and therotating platform 62S.

As indicated by the arrow R of FIG. 2, the rotation shaft 63 is rotated,so that the downstream pipes N3 of the nozzles 60 a to 60 c move betweenan upper position above the center of the substrate W held by the spinchuck 21 (hereinafter referred to as a substrate upper position) and aposition above a nozzle waiting pot 210 provided in a region outside thesubstrate W (hereinafter referred to as a nozzle waiting upperposition). The nozzle waiting pot 210 has a box shape, with an upperportion thereof being open.

In the nozzle device 600 of FIG. 3, the block-shaped coupling member 61,the holder 62 and the rotating platform 62S are formed of resin such as,for example, heat-treated polyvinyl chloride (HTPVC), polypropylene(PP), fiberglass-reinforced polypropylene (FRPP) or the like.

Fluid supply pipes 70 a, 70 b, 70 c extend from upper ends of theupstream pipes N1 of the nozzles 60 a, 60 b, 60 c, respectively. Groundconnection wires er extend from the arm pipes N2 of the nozzles 60 a to60 c, respectively.

As shown in FIG. 2, the fluid supply pipes 70 a, 70 b, 70 c areconnected, respectively, to a first chemical liquid supply source 81, aswitching device 82 and a third chemical liquid supply source 85provided in the fluid box 2 a to 2 d. The switching device 82 in thefluid box 2 a to 2 d is further connected to a second chemical liquidsupply source 83 by a fluid supply pipe 82 a, while being connected to apure water supply source 84 by a fluid supply pipe 82 b. Moreover,discharge valves 71 a, 71 b, 71 c are provided, respectively, in themiddle of the fluid supply pipes 70 a, 70 b, 70 c capable of beingopened and closed for permitting and inhibiting the flow of the chemicalliquid or the pure water therethrough.

Accordingly, a first chemical liquid is supplied from the first chemicalliquid supply source 81 to the nozzle 60 a through the fluid supply pipe70 when the discharge valve 71 a is opened.

The switching device 82 includes a valve or the like, for example, andselectively supplies either a second chemical liquid supplied from thesecond chemical liquid supply source 83 or the pure water supplied fromthe pure water supply source 84 to the nozzle 60 b. In this way, thesecond chemical liquid or the pure water is supplied to the nozzle 60 bthrough the fluid supply pipe 70 b when the discharge valve 71 b isopened.

A third chemical liquid is supplied from the third chemical liquidsupply source 85 to the nozzle 60 c through the fluid supply pipe 70 cwhen the discharge valve 71 c is opened.

Note that the first chemical liquid supply source 81, the secondchemical liquid supply source 83, the third chemical liquid supplysource 85 and the pure water supply source 84 may not necessarily bearranged in the fluid box 2 a to 2 d.

The first chemical liquid supply source 81, the second chemical liquidsupply source 83, the third chemical liquid supply source 85 and thepure water supply source 84 may be, for example, a chemical liquidsupply system or a pure water supply system in the factory not shown.

The ground connection wires er extending from the nozzles 60 a, 60 b, 60c are connected to a ground line of the substrate processing apparatus100.

In the present embodiment, SPM, SC2, and HF are used as the firstchemical liquid, the second chemical liquid and the third chemicalliquid, respectively.

Thus, in removal of resist residues on the substrate W, SPM as the firstchemical liquid or SC2 as the second chemical liquid is supplied ontothe substrate W. In removal of an oxide film on the substrate W, HF asthe third chemical liquid is supplied onto the substrate W. After thechemical liquid process by any of the first to third chemical liquids isperformed on the substrate W, the pure water is supplied onto thesubstrate W to perform the rinsing process.

(3) OPERATIONS OF THE NOZZLE DEVICE

Operations of the nozzle device 600 during the chemical liquid processand the rinsing process will be described. Before the chemical liquidprocess is started, lower ends of the downstream pipes N3 of the nozzles60 a to 60 c are housed in the nozzle waiting pot 210.

When the chemical liquid process is started, the rotation shaft 63 ismoved up by the nozzle device moving mechanism 64. Thus, the nozzles 60a to 60 c are moved up, so that the downstream pipes N3 of the nozzles60 a to 60 c move from the nozzle waiting pot 210 to the nozzle waitingupper position.

Then, the rotation shaft 63 is rotated by the nozzle device movingmechanism 64 described above, so that the downstream pipes N3 of thenozzles 60 a to 60 c move from the nozzle waiting upper position to thesubstrate upper position.

The rotation shaft 63 is subsequently lowered by the nozzle devicemoving mechanism 64. Accordingly, the nozzles 60 a to 60 c are lowered,so that the lower ends of the downstream pipes N3 of the nozzles 60 a to60 c are brought close to the surface of the substrate W.

In this state, any of the first to third chemical liquids is suppliedfrom the nozzles 60 a to 60 c onto the substrate W, and the chemicalliquid process is performed.

When the chemical liquid process is finished, the supply of the chemicalliquid onto the substrate W is stopped. Then, the pure water is suppliedfrom the nozzle 60 b onto the substrate W. In this way, the rinsingprocess is performed.

After the rinsing process is finished, the supply of the pure water ontothe substrate W is stopped. Then, the nozzles 60 a to 60 c are moved upby the nozzle device moving mechanism 64, so that the downstream pipesN3 of the nozzles 60 a to 60 c move from the position close to thesurface of the substrate W to the substrate upper position.

Next, the rotation shaft 63 is rotated again by the nozzle device movingmechanism 64, so that the downstream pipes N3 of the nozzles 60 a to 60c move from the substrate upper position to the nozzle waiting upperposition. The nozzles 60 a to 60 c are subsequently lowered by thenozzle device moving mechanism 64, so that the lower ends of thedownstream pipes N3 are housed in the nozzle waiting pot 210.

In this state, the nozzle waiting pot 210 recovers the processing liquid(the first to third chemical liquids or the pure water) falling in dropsfrom the nozzles 60 a to 60 c after the chemical liquid process and therinsing process.

An opening 210 h is formed in a lower end of the nozzle waiting pot 210.A pipe 211 that leads the processing liquid recovered by the nozzlewaiting pot 210 to the chemical liquid recovery device or the drainsystem in the factory, which are not shown, is connected to the opening210 h. Thus, the processing liquid recovered by the nozzle waiting pot210 is recovered or drained through the pipe 211.

(4) DETAILS OF THE STRUCTURES OF THE NOZZLE

The structures of the nozzles 60 a to 60 c of FIG. 2 and FIG. 3 will bedescribed in detail. FIG. 4 is a partially enlarged sectional view ofthe nozzle 60 a in the nozzle device 600 of FIG. 3.

The enlarged sectional view of a portion Q1 (a tip portion) of thenozzle 60 a indicated by a bold dotted line in FIG. 3 is shown in FIG.4( a). The enlarged sectional view of a portion Q2 (a connecting part ofthe ground connection wire er) of the nozzle 60 a indicated by a bolddotted line in FIG. 3 is shown in FIG. 4( b).

As shown in FIG. 4( a), the nozzle 60 a includes a metallic pipe 91, afirst resin pipe 92, a second resin pipe 93 and a cylindrical boss 94.

The first resin pipe 92 includes an internal flow path fc through whichthe processing liquid flows, having a structure where the processingliquid is discharged from an opening of a tip portion (a lower end)thereof and having an outer diameter slightly smaller than the innerdiameter of the metallic pipe 91. The first resin pipe 92 is insertedinto the metallic pipe 91. The tip portion of the first resin pipe 92projects from the tip of the metallic pipe 91 by a predetermined length.

The second resin pipe 93 has a slightly larger inner diameter than theouter diameter of the metallic pipe 91. The metallic pipe 91 is insertedinto the second resin pipe 93. In this state, the tip portion of thefirst resin pipe 92 projects from the tip of the second resin pipe 93 bya predetermined length.

The boss 94 has approximately the same inner diameter as the outerdiameter of the first resin pipe 92 and has approximately the same outerdiameter as that of the metallic pipe 91. Thus, the boss 94 is mountedon the tip portion of the metallic pipe 91 inside the second resin pipe93.

In the tip portion of the nozzle 60 a, the outer peripheral surface ofthe first resin pipe 92, the end surface of the second resin pipe 93 andthe end surface of the boss 94 are welded by welding resin 95.

In the above structure, the metallic pipe 91 is reliably coated with thefirst resin pipe 92, the second resin pipe 93, the boss 94 and thewelding resin 95.

As shown in FIG. 3, the fluid supply pipe 70 a extends from the upperend of the upstream pipe N1 of the nozzle 60 a. This fluid supply pipe70 a is formed by extending the first resin pipe 92 of FIG. 4( a) andFIG. 4( b).

In the arm pipe N2 of the nozzle 60 a, a through hole is formed in onepart of the second resin pipe 93, and a screw hole is provided in onepart of the metallic pipe 91 as shown in FIG. 4( b).

A screw N connected to a ground wire 96 is attached to the screw hole ofthe metallic pipe 91. Thus, the ground wire 96 and the metallic pipe 91are connected to each other.

The ground wire 96, excluding part thereof connected to the metallicpipe 91, is coated with a resin tube 97. The ground connection wire erof FIG. 2 and FIG. 3 is composed of the ground wire 96 and the resintube 97 that coats the ground wire 96.

One end of the resin tube 97 is welded to an outer peripheral surface ofthe second resin pipe 93 by the welding resin 95. Thus, the connectionpart of the metallic pipe 91 and the ground wire 96 are reliably coatedwith resin.

The ground connection wire er connected to the nozzle 60 a is connectedto the ground line of the substrate processing apparatus 100 as shown inFIG. 2. Accordingly, the metallic pipe 91 is reliably grounded.

In the present embodiment, a conductive metallic material having highstrength is used for the above metallic pipe 91. As the metallicmaterial, a metallic material such as stainless steel having highcorrosion resistance is more preferably used, while stainless steel,iron, copper, bronze, brass, aluminum, silver, gold or the like can beused, for example.

While materials such as fluororesin, vinyl chloride resin or the likethat have superior chemical resistance are used for the first resin pipe92, the second resin pipe 93, the boss 94, the welding resin 95 and theresin tube 97, fluororesin is preferably used.

Fluororesin includes polytetrafluoroethylene (PTFE) andpolytetrafluoroethylene-perfluoroalkoxyethylene copolymer (PFA), forexample.

Here, PFA having flexibility is more preferably used for the first resinpipe 92, the second resin pipe 93, the welding resin 95 and the resintube 97, and polytetrafluoroethylene that is harder than PFA is morepreferably used for the boss 94. This facilitates the manufacture of thenozzle 60 a.

While FIG. 4 shows the internal structure of the nozzle 60 a, the othernozzles 60 b, 60 c also have the same internal structure.

(5) EFFECTS OF THE EMBODIMENT

The nozzles 60 a to 60 c are made of the metallic pipes 91 having highstrength. Thus, the strength needed for supporting the downstream pipesN3 can be obtained without making larger the radial thickness of the armpipes N2 of the nozzles 60 a to 60 c as shown in FIG. 2 and FIG. 3.

Moreover, since the radial thickness of the arm pipes N2 of the nozzles60 a to 60 c is not required to be larger, the nozzles 60 a to 60 c canbe reduced in weight and a load applied to the nozzle device movingmechanism 64 can be decreased.

Furthermore, since it is not necessary to make larger the radialthickness of the arm pipes N2 of the nozzles 60 a to 60 c, the outerdiameter of each of the nozzles 60 a to 60 c can be reduced. Thus, thesize and the surface area of each of the nozzles 60 a to 60 c aredecreased, so that the amount of the processing liquid adhering to thearm pipes N2 is sufficiently reduced.

This prevents processing defects of the substrate W caused when theprocessing liquid adhering to the arm pipes N2 is dropped onto thesubstrate W, and also prevents the substrate W from being contaminatedwith particles that are generated when the processing liquid adhering tothe arm pipes N2 is dried.

In addition, the metallic pipes 91 constituting the nozzles 60 a to 60 chave rigidity. Therefore, even though the processing liquid in thenozzles 60 a to 60 c vibrates due to reaction, the nozzles 60 a to 60 cwill not vibrate greatly. Moreover, the nozzles 60 a to 60 c will notvibrate because of the force generated at the time of starting thedischarge of the processing liquid. Accordingly, the processing defectsof the substrate caused by the vibration of the nozzles 60 a to 60 c areprevented.

Furthermore, the metallic pipes 91 constituting the nozzles 60 a to 60 care coated with the first resin pipes 92, the second resin pipes 93, thebosses 94 and the welding resin 95 that have superior chemicalresistance, while the ground wires 96 connected to the metallic pipes 91are also coated with the welding resin 95 and the resin tubes 97 thathave superior chemical resistance. In addition, the fluid supply pipes70 a to 70 c made of resin (FIG. 2) are provided in the nozzles 60 a to60 c, respectively, to continuously extend from the first resin pipes 92to introduce the processing liquid to the nozzles 60 a to 60 c.

Thus, the metallic pipes 91 and the ground wires 96 are not brought intocontact with the chemical liquid and the chemical liquid atmosphere evenin the case where the chemical liquid process is performed in thecleaning processing units 5 a to 5 d. Consequently, corrosion of themetallic pipes 91 and the ground wires 96 caused by the chemical liquidas well as metallic contamination caused by elution of metallic ions areprevented.

As described above, the electrically charged processing liquid issupplied to the nozzles 60 a to 60 c through the fluid supply pipes 70 ato 70 c (FIG. 2) in the chemical liquid process of the substrate W.

Here, the metallic pipes 91 have electrical conductivity, and cover theouter periphery of the first resin pipes 92. Thus, the electricallycharged processing liquid is introduced to the nozzles 60 a to 60 chaving parts covered with the metallic pipes 91, so that the amount ofthe charges of the processing liquid is reduced. Accordingly, theelectric discharge from the processing liquid to the substrate W issuppressed during the supply of the processing liquid from the nozzles60 a to 60 c onto the substrate W. This reliably prevents variouspatterns such as circuits, devices or the like formed on the substrate Wfrom being damaged.

Note that the applicant's experiment has revealed that the effect thatthe electric discharge from the processing liquid to the substrate W issuppressed by reducing the amount of the charges of the processingliquid cannot be achieved only by, for example, bringing the metallicwires into direct contact with very small parts of the first resin pipes92, and it is necessary to cover the outer periphery of the first resinpipes 92 with a predetermined metallic material or conductive material.

(6) OTHER STRUCTURAL EXAMPLES OF THE NOZZLES

In the present embodiment, the nozzle 60 a to 60 c may include thefollowing structures. FIG. 5( a) and FIG. 5( b) are diagrams showing theother structural examples of the nozzle provided in the nozzle device600 of FIG. 2 and FIG. 3. For the respective structural examples shownin FIG. 5( a) and FIG. 5( b), different points from the nozzle 60 a ofFIG. 4( a) will be described.

First, the structural example shown in FIG. 5( a) will be described. Asshown in FIG. 5( a), an electrically conductive resin pipe 93 b is usedin the nozzle of the present example instead of the second resin pipe 93of FIG. 4( a) through which the metallic pipe 91 is inserted.Electrically conductive fluororesin having chemical resistance, forexample, is used as resin for this electrically conductive resin pipe 93b. As the electrically conductive fluororesin, electrically conductivePTFE, electrically conductive PFA or the like is used.

Accordingly, the amount of the charges of the processing liquid flowingthrough the internal flow path fc of the first resin pipe 92 issufficiently reduced. Consequently, the electric discharge from theprocessing liquid to the substrate W is reliably suppressed in thesupply of the processing liquid from each nozzle 60 a to 60 c onto thesubstrate W. This more reliably prevents the patterns formed on thesubstrate W from being damaged.

Next, the structural example shown in FIG. 5( b) will be described. Inthe nozzle of the present example, the whole surface of the metallicpipe 91 is coated with a resin film 91 c having superior chemicalresistance, as shown in FIG. 5( b). Fluororesin (PTFE, PFA or the like),for example, is used as the resin film 91 c.

Accordingly, the metallic pipe 91 coated with the resin film 91 c havingchemical resistance is further coated with the first resin pipe 92, thesecond resin pipe 93, the boss 94 and the welding resin 95. Thisreliably prevents the metallic pipe 91 from coming into contact with thechemical liquid and the chemical liquid atmosphere during the chemicalliquid process of the substrate W. Thus, corrosion of the metallic pipe91 caused by the chemical liquid and metallic contamination caused byelution of metallic ions are reliably prevented.

Note that the metallic pipe 91 of each nozzle 60 a to 60 c is connectedto the ground line of the substrate processing apparatus 100 through theground connection wire er in the nozzle device 600 according to thepresent embodiment, however, the metallic pipe 91 is not necessarilyneeded to be connected to the ground line.

In addition, although the second resin pipe 93 of each nozzle 60 a to 60c is provided in the nozzle device 600 according to the presentembodiment, the second resin pipe 93 is not necessarily needed, and canbe eliminated in the case where the processing liquid that does noterode the metallic pipe 91 is used. The second resin pipe 93 may beeliminated in the case, for example, where the processing liquid is achemical liquid with comparatively low density, pure water, functionalwater (including hydrogen water, nitrogen gas dissolved water,electrolytic ionic water) or the like. In this case, the metallic pipe91 may be coated with the above mentioned resin film 91 c.

The inventors of the present invention measured and compared theelectric potential of the charges of the processing liquid beforepassing through each nozzle 60 a to 60 c and the electric potential ofthe charges of the processing liquid after passing through each nozzle60 a to 60 c (discharged processing liquid) with the metallic pipe 91 ofthe nozzle 60 a to 60 c not being grounded.

In contrast to the electric potential of the charges of the processingliquid before passing through each nozzle 60 a to 60 c being −4.00 kv,the electric potential of the charges of the processing liquid afterpassing through each nozzle 60 a to 60 c was −0.14 kv.

This result made it clear that the electric potential of the charges ofthe processing liquid passing through the internal flow path fc isreduced even in the case where the metallic pipe 91 of each nozzle 60 ato 60 c is not connected to the ground line. Note that electricpotential of charges of the substrate W is normally 0 kv, since thesubstrate W is not previously charged.

(7) OTHER EMBODIMENTS

While the three nozzles 60 a to 60 c that supply the processing liquidonto the substrate W are provided in the nozzle device 600 according tothe above embodiment, the number of the nozzles provided in the nozzledevice 600 is not limited. In the nozzle device 600, one nozzle as wellas two or more than three of nozzles may be provided, for example.

While the use of SPM, SC2 and HF as the first to third chemical liquidsis described in the above embodiment, other chemical liquids may be usedfor the first to third chemical liquids. In addition, while the use ofpure water as the rinse liquid is described, other rinse liquids may beused.

As other chemical liquids, buffered hydrofluoric acid (BHF), dilutedhydrofluoric acid (DHF), hydrochloric acid, sulfuric acid, nitric acid,phosphoric acid, acetic acid, oxalic acid, ammonia water, citric acid,oxygenated water, or aqueous solution of TMAH or the like, or a mixturesolution thereof may be used.

As other rinse liquids, carbonated water, ozone water, magnetic water,regenerated water (hydrogen water), nitrogen gas dissolved water, ionwater, or organic solvent such as IPA (isopropyl alcohol) or the like,for example, may be used.

In the substrate processing apparatus 100 according to the aboveembodiment, the nozzles 60 a to 60 c may be cleaned away by supplyingpure water or the like to the nozzles 60 a to 60 c of the nozzle device600.

Since the outer surfaces of the nozzles 60 a to 60 c have high waterrepellency in the case where the second resin pipes 93 of FIG. 4 areformed of fluororesin, the nozzles 60 a to 60 c can be cleaned away in ashort time and cleaning level of the cleaning processing units 5 a to 5d is improved.

(8) Correspondences Between Structural Elements in Claims and Elementsin the Embodiments

In the following paragraph, non-limiting examples of correspondencesbetween various elements recited in the claims below and those describedabove with respect to various embodiments of the present invention areexplained.

In the above embodiments, the second resin pipe 93 and the electricallyconductive resin pipe 93 b are examples of the second resin pipe, theopening on the tip of the first resin pipe 92 is an example of adischarge port, the first resin pipe 92 is an example of the first resinpipe. Moreover, the boss 94 and the welding resin 95 are examples of asealing member, and the spin chuck 21 is an example of a substrateholder. As each of various elements recited in the claims, various otherelements having structures or functions described in the claims can bealso used.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing the scope andspirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

What is claimed is:
 1. A nozzle supported by a supporting member forsupplying a processing liquid downward onto a substrate, comprising: afirst resin pipe made of a resin material, through which said processingliquid flows; a metallic pipe made of a metallic material and providedto cover an outer periphery of said first resin pipe; and a second resinpipe made of a resin material and provided to cover an outer peripheralsurface of said metallic pipe, wherein said first resin pipe, saidmetallic pipe and said second resin pipe constitute (1) an arm pipehaving a first end where the processing liquid is received, and a secondend, and extending in a horizontal direction, and (2) a downstream pipeextending so as to curve downward from the second end of said arm pipe,and said downstream pipe has on an end thereof a discharge port thatdischarges said processing liquid flowing from said first end to saidsecond end of said arm pipe within said first resin pipe, and an end ofsaid first resin pipe projects downward from an end of said second resinpipe.
 2. The nozzle according to claim 1, wherein said resin material ofsaid first resin pipe includes fluororesin.
 3. The nozzle according toclaim 1, wherein said resin material of said second resin pipe includeselectrically conductive resin.
 4. The nozzle according to claim 1,wherein said metallic pipe is grounded.
 5. The nozzle according to claim1, further comprising a resin film that coats a surface of said metallicpipe.
 6. The nozzle according to claim 5, wherein said resin film ismade of fluororesin.
 7. The nozzle according to claim 1, wherein saidmetallic pipe is made of stainless steel.
 8. The nozzle according toclaim 1, wherein the end of said first resin pipe projects from an endof said metallic pipe.
 9. The nozzle according to claim 8, wherein theend of said second resin pipe projects from the end of said metallicpipe.
 10. The nozzle according to claim 1, further comprising a sealingmember made of resin and sealing the end of said metallic pipe.
 11. Asubstrate processing apparatus that performs a predetermined process ona substrate, comprising: a substrate holder that holds the substrate;and a nozzle for supplying a processing liquid downward onto thesubstrate held by said substrate holder, wherein said nozzle issupported by a supporting member, and includes a first resin pipe madeof a resin material through which said processing liquid flows, ametallic pipe made of a metallic material and provided to cover an outerperiphery of said first resin pipe, and a second resin pipe made of aresin material and provided to cover an outer peripheral surface of saidmetallic pipe, wherein said first resin pipe, said metallic pipe andsaid second resin pipe constitute (1) an arm pipe having a first endwhere the processing liquid is received, and a second end, and extendingin a horizontal direction, and (2) a downstream pipe extending so as tocurve downward from the second end of said arm pipe, and said downstreampipe has on an end thereof a discharge port that discharges saidprocessing liquid flowing from said first end to said second end of saidarm pipe within said first resin pipe, and an end of said first resinpipe projects downward from an end of said second resin pipe.
 12. Anozzle supported by a supporting member for supplying a processingliquid downward onto a substrate, comprising: a first resin pipe made ofa resin material, through which said processing liquid flows; a metallicpipe made of a metallic material and provided to cover an outerperiphery of said first resin pipe; a second resin pipe made of a resinmaterial and provided to cover an outer peripheral surface of saidmetallic pipe; and a sealing member made of resin and sealing an end ofsaid metallic pipe; and said first resin pipe, said metallic pipe andsaid second resin pipe constitute (1) an arm pipe having a first endwhere the processing liquid is received, and a second end, and extendingin a horizontal direction, and (2) a downstream pipe extending so as tocurve downward from the second end of said arm pipe, said downstreampipe has on an end thereof a discharge port that discharges saidprocessing liquid flowing from said first end to said second end of saidarm pipe within said first resin pipe, and an end of said first resinpipe projects downward from said sealing member.